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| SD1541-09 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESI .450 .7. .REFRACTORY .BALLASTI .30: .I GNED FOR HIGH POWER PULSED IFF APPLICATIONS WATTS (min.) IFF 1030/1090 MHz 0 dB MIN. GAIN GOLD METALLIZATION N G AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS N PUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1541-09 BRANDING 1541-9 PIN CONNECTION DESCRIPTION The SD1541-09 is a gold metallized silicon NPN planar transistor. The SD1541-09 is designedfor applications requiring high peak and low duty cycles such as IFF. The SD1541-09 is packaged in a metal/ceramic package with internal input matching, resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 1458 +200 - 65 to +150 V V V A W C C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.12 C/W 1/4 SD1541-09 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE IC = 25mA IC = 50mA IE = 10mA VCE = 50V VCE = 5V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = .25A 65 65 3.5 -- 5 -- -- -- -- -- -- -- -- 25 200 V V V mA -- DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1090 MHz f = 1090 MHz = 10Sec, Duty Cycle PIN = 90 W PIN = 90 W = 1% VCE = 50 V VCE = 50 V 450 7.0 -- -- -- -- W dB Pulse W idth TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/4 SD1541-09 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN FREQ. 1030 MHz TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 1090 MHz ZIN () 1.6 + j 5.1 2.5 + j 4.7 ZCL () 1.1 - j 2.0 1.2 - j 1.2 TEST CIRCUIT LAYOUT C1 C2 C3 C4 C5 : : : : : .4 - 2.5pF Johanson Gigatrim 100pF Chip Capacitor .01fD CK05BX103K 1000fD Electrolytic 63V 100pF Chip Capacitor L1 L2 : 1/2 Turn .026" Diameter Wire Loop = .170" Width x .320" Height : 1 Turn .026" Diameter Wire I.D. .130" All Dimensions are in Inches Board Er = 10.2, Height .025" 3/4 SD1541-09 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0112 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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